重ねる、重なる、重なっている

US5603853

"A method of welding at least two sheets using a high energy density radiation beam that preferably is a laser beam or an electron beam for producing a welded lap joint that is substantially(実質的) completely fused across the width of overlap(重なり) of the sheets preferably for enabling shaping(整形) or forming(成型、形成) to be performed such that at least one of the sheets and at least portion of a weld line defined between the overlapped sheets are bent or three dimensionally contoured(形状). In practicing(実施) a preferred embodiment of the method, the sheets are overlapped and welded by directing at least one radiation beam toward the overlapped sheets having sufficient power density and for a sufficient amount of time to weld the sheets such that they are substantially completely fused from front to back in the overlap region. As a result, the sheets form a blank that preferably(好適) is formed or shaped, such as by shaping, deep drawing(絞り), hydro-forming or roll forming, such that at least one of the sheets and a portion of the weld line of the sheets are bent or three dimensionally contoured. After shaping or forming, the sheets preferably form(形成) at least part of an article of manufacture."

"FIGS. 8A through 8C illustrate a second preferred welding setup for practicing the lap welding method of this invention having the sheets 30 & 32 overlapped with each other（重ね合わせる）and the weld interface 48 acutely angled relative to the direction of gravity, F_g, for influencing the molten weld nugget 102 during welding."

US20170241524
When synchronization areas of two PRHs or two synchronization sources are overlapped (as shown in FIG. 2C), the PRHs or synchronization sources can establish common timing by selecting one of the PRHs or synchronization sources as a common synchronization source. In this case, after a re-synchronization procedure, the whole extended area (i.e., both synchronization areas) operates synchronously.

目付、坪量

US2008311343（対応日本語公報）
"The basis weight（目付；坪量？）of nonwoven fabrics is usually expressed in grams per square meter (gsm)."

US8541323（対応日本語公報；優先権主張日本）
"A basis weight（目付）of the fibrous form of the invention is not particularly limited. However, the fibrous form having a basis weight（目付）of 10 to 200 g/m² can be suitably used."

「不織布業界では坪量を“目付”と呼ぶのが通例」（「不織布とは」株式会社サンオーク
）

抄網、抄き網

US7703481（対応日本語公報）
"4. A paper machine fabric as claimed in claim 1, wherein the fabric is a wet wire（湿式抄網）."

US7488383（対応日本語公報）
"The dispersion may be first dewatered by gravity and then dewatered by vacuum suction means; the wet mat is then pressed to a specified thickness between rolls and the support wire（抄網）to remove additional water."

US5676796（対応日本語公報）
"EXAMPLE 2（実施例２）

In this example, an actual mill stock for making fine paper, printing paper and writing quality paper and having 23% filler was subjected to various laboratory retention, drainage, drying and formation tests after treatment with various combinations of coagulant A (as above), flocculant E (90 mole % acrylamide with 10 mole % dimethylaminoethyl acrylate quaternised with methyl chloride, intrinsic viscosity 7 dl/g), and bentonite.

When polymer was added to thick stock, it was in each instance subsequently sheared using a large angle blade stirrer diameter 6 cm, shear speed 2,000 rpm. When polymer was added to thin stock, it was subsequently sheared using a propellor stirrer diameter 5 cm, shear speed 1500 rpm. When bentonite was added to the thin stock, the thin stock was then stirred with the same propellor stirrer but at 800 rpm.

All mixing, shearing and retention tests were carried out in a baffled Britt Dynamic Drainage Jar fitted with a 250 μm screen wire（抄網）."

"The conventional dilution stages and other processing stages leading to the machine wire necessarily subject the suspension to turbulence and shear and this will inevitably result in degradation of the initial flocs and possibly some resuspension of fibres. The dilution, for instance with white water from the wire（抄網）, generally gives a thin stock having a solids content of 0.3 to 2%."

配合

US20150017868（対応日本語公報）
(Abstract)
"A hot melt adhesive composed of an ethylene vinyl acetate copolymer, a hydrogenated styrenic block copolymer, a tackifying resin, and a liquid plasticizer. The preferred ethylene vinyl acetate copolymer has a vinyl acetate content between 8 and 28 percent by weight, and the preferred hydrogenated styrenic block copolymer is a styrene-ethylene-butylene-styrene having about 30% styrene content and essentially no diblock. The hot melt gives excellent peel strength when used as a construction adhesive for disposable nonwoven articles. It can also be formulated（配合）to exhibit very low bleed through and blocking characteristics when used on low basis weight nonwoven fabrics."

US20160046807（対応日本語公報）
"1. A polyamide composition produced by a process comprising the step of compounding（配合）a mixture comprising a polyamide, an olefin-maleic anhydride copolymer, and an impact modifier."

US9102571（対応日本語公報）
"7. The method of claim 1, wherein forming the at least one prepregged composite material comprises formulating（配合）the pre-ceramic matrix slurry to impart the prepregged composite material with sufficient rigidity to be cut by the advanced fiber placement apparatus following placement of at least a portion of the at least one prepregged composite material over the at least one surface of the tool and with sufficient tackiness to adhere to the at least one surface of the tool."

US20140057105（対応日本語公報）
(Abstract)
"Various embodiments of the present invention relate to surface enhanced pulp fibers, various products incorporating（配合）surface enhanced pulp fibers, and methods and systems for producing surface enhanced pulp fibers. Various embodiments of surface enhanced pulp fibers have significantly increased surface areas compared to conventional refined fibers while advantageously minimizing reductions in length following refinement. The surface enhanced pulp fibers can be incorporated into（配合）a number of products that might benefit from such properties including, for example, paper products, paperboard products, fiber cement boards, fiber reinforced plastics, fluff pulps, hydrogels, cellulose acetate products, and carboxymethyl cellulose products. In some embodiments, a plurality of surface enhanced pulp fibers have a length weighted average fiber length of at least about 0.3 millimeters and an average hydrodynamic specific surface area of at least about 10 square meters per gram, wherein the number of surface enhanced pulp fibers is at least 12,000 fibers/milligram on an oven-dry basis."

US20130149926（対応日本語公報）
"19. The method of claim 15 further including forming the solution by diluting the binder with water and compounding（配合）a single flame retardant with the binder and water mixture."

US20140220198（対応日本語公報）
"12. A process of manufacturing an ultrasonically-treated nutritional formulation（栄養製剤）, the process comprising: combining（配合）a protein, a carbohydrate, a lipid, a binder, and water to form a slurry; subjecting the slurry to high power ultrasound; and extruding the slurry to produce the ultrasonically-treated nutritional formulation."

US7462662（対応日本語公報）
(Abstract)
"Improved fire-retarded properties can be imparted to fiber reinforced polycarbonate resin composition by incorporating into（配合）the polycarbonate an effective flame-retardant amount of a combination of perfluoroalkane sulfonate and talc."

"19. A method to increase the flame retardant property of a polycarbonate composition containing an amount of at least a perfluoroalkane sulfonate flame retardant component, to render the composition a flame rating of at least V-0 in the Underwriter's Laboratory UL-94 protocol when measured on a test specimen of about 0.062 inch by about 0.5 inch by about 5 inch dimensions, said method comprises blending into（配合）said composition an effective flame-retardant amount talc; wherein the polycarbonate composition consists essentially of the polycarbonate resin, the perfluoroalkane sulfonate flame retardant and the talc."

"Because of their strength and clarity, polycarbonate resins have a great many significant commercial applications. Unfortunately, polycarbonate resins are inherently flammable and can drip hot molten material causing nearby materials to catch fire as well. Thus, in a number of applications employing polycarbonate blends, it may be desirable to include（配合）additives which retard the flammability of the material and/or which reduce dripping. The challenge is to identify additives which accomplish this purpose without compromising the desirable properties of strength and clarity, without introducing new problems (such as the potential environmental problems associated with halogenated additives) and without prohibitively increasing the price."

"Achieving flame-retardant resin properties sufficient for obtaining an Underwriter's Laboratories listing is a prerequisite for many commercial applications of thermoplastic resins. To achieve listings of UL94 V-1 and or UL94 V-0 at the desired thicknesses (.ltoreq.2.5 mm), several known flame retardants can be used. But in addition to adding cost, they have other disadvantages compared to non-flame retarded compositions. For example, the use of brominated compounds would preclude a resin from use in applications where conformance with TCO'99 guidelines (non-halogen) is desired. Other regulations or customer preferences may preclude the use of elemental (red) phosphorous or organic phosphates and phosphites. In addition, organic phosphates and phosphites reduce the deflection temperature under load (heat distortion temperature) of polycarbonate (PC)-resins and--because they are low molecular weight compounds--can form undesirable deposits on injection molding tools or the part surface, which in turn can lead to chemical stress cracking. Melamine cyanurates or inorganic hydrates (like aluminum trihydrate--ATH) cannot be incorporated（配合）effectively into resins requiring high processing temperatures due to the onset of their own thermal decomposition in that temperature range and typically reduce impact resistance significantly due to their particulate nature. These constraints are even more important in fiber reinforced composites, because these typically require larger amounts of flame retardant or more effective/costly ones to achieve UL94 V-1 or even UL94 V-0 listings.

Among the additives which are widely used commercially in fire-retarded polycarbonate resin compositions are organic salts, particularly sulfonic acid salts. Particular examples of these salts are perfluoroalkane sulfonates, such as potassium perfluorobutane sulfonate ("PFBS", also known as "Rimar salt" and potassium diphenylsulfone sulfonate ("KSS"), which may yield haze free compositions when blended with（配合）polycarbonate resin. The use of perfluoroalkane sulfonates in polycarbonate resins is described in U.S. Pat. No. 3,775,367. However, the benefits which can be obtained using these materials alone are limited and indeed additional additives are generally included."

"Applicants have found that（見出した、知見を得た）the incorporation（配合）of an effective, flame-retardant amount of talc surprisingly reduces the flame-out time of a polycarbonate composition, even without any flame retardant component being present."

リチウムイオン電池

US9356271
(Abstract)
"An electrochemical stack comprising（から成る、含む）carrier ions（＊複数）, an anode comprising an anode active material layer, a cathode comprising a cathode active material layer, a separator between the anode and the cathode comprising（＊係り：separator comprising；cathodeは既述の"the cathode"で、それが"a porous dielectric material"を有するとすればそれは新情報であって、「既述の、多孔性の絶縁材を有するカソード」ではおかしいから、だと思う）a porous dielectric material and a non-aqueous electrolyte, and an ionically permeable conductor layer located（配置）between the separator and an electrode active material layer."

"FIELD OF THE INVENTION

The present invention generally relates to structures for use in energy storage devices, to energy storage devices incorporating（有する、内蔵）such structures, and to methods for producing such structures and energy devices.

BACKGROUND OF THE INVENTION

Rocking chair （ロッキングチェア）or insertion secondary batteries are a type of energy storage device in which carrier ions, such as lithium, sodium or potassium ions, move between an anode electrode and a cathode electrode through an electrolyte. The secondary battery may comprise（から成る、有する）a single battery cell, or two more battery cells that have been electrically coupled to form the battery, with each battery cell comprising an anode electrode, a cathode electrode, and an electrolyte.

In rocking chair battery cells, both the anode and cathode comprise materials into which a carrier ion inserts（挿入）and extracts（脱離）. As（時、に際し） a cell is discharged, carrier ions are extracted from the anode and inserted into the cathode. As a cell is charged, the reverse process occurs: the carrier ion is extracted from the cathode and inserted into the anode.

FIG. 1shows a cross sectional view of an electrochemical stack of an existing energy storage device, such as a non-aqueous, lithium-ion battery. The electrochemical stack 1 includes a cathode current collector 2, on top of which（の上、上部）a cathode layer 3 is assembled（組み付け、組み立て、配設）. This layer is covered by a microporous separator 4, over which（の上、上部）an assembly（組立体）of an anode current collector 5 and an anode layer 6 are placed. This stack is sometimes covered with another separator layer (not shown) above the anode current collector 5, rolled and stuffed into a can, and filled with a non-aqueous electrolyte to assemble a secondary battery.

The anode and cathode current collectors pool（溜める）electric current from the respective（それぞれ、各々）active electrochemical electrodes and enables transfer of the current to the environment outside the battery. A portion of an anode current collector is in physical contact with the anode active material while a portion of a cathode current collector is in contact with（接触）the cathode active material. The current collectors do not participate in（関与）the electrochemical reaction and are therefore restricted to materials that are electrochemically stable in the respective electrochemical potential ranges for the anode and cathode.

In order for a current collector（＊不定冠詞）to bring current（＊無冠詞）to the environment outside the battery, it is typically connected to a tab, a tag, a package feed-through（フィードスルー） or a housing feed-through, typically collectively referred to as contacts. One end of a contact is connected to one or more current collectors while the other end passes through the battery packaging for electrical connection to the environment outside the battery. The anode contact is connected to the anode current collectors and the cathode contact is connected to the cathode current collectors by welding, crimping（圧着）, or ultrasonic bonding or is glued（接着）in place with an electrically conductive glue.

During a charging process, lithium（＊無冠詞）leaves the cathode layer 3 and travels（移動）through the separator 4 as a lithium ion（＊不定冠詞）into the anode layer 6. Depending upon the anode material used（＊cf. "used anode material"）, the lithium ion either intercalates（インターカレート、挿入される）(e.g., sits in a matrix of an anode material without forming an alloy) or forms an alloy. During a discharge process, the lithium leaves the anode layer 6, travels through the separator 4 and passes through to the cathode layer 3. The current conductors conduct electrons from the battery contacts (not shown) to the electrodes or vice versa.

Existing energy storage devices, such as batteries, fuel cells, and electrochemical capacitors, typically have two-dimensional laminar（積層）architectures（構造）(e.g., planar or spiral-wound laminates（積層体）) as illustrated in FIG. 1 with（付帯、付加説明）a surface area of each laminate being roughly equal to its geometrical footprint (ignoring porosity and surface roughness).

Three-dimensional batteries have been proposed in the literature（文献；＊定冠詞） as ways to improve（改善）battery capacity and active material utilization. It has been proposed that a three-dimensional architecture may be used to provide higher surface area and higher energy as compared to（比較、比べ）a two dimensional, laminar battery architecture. There is a benefit to making a three-dimensional energy storage device due to the increased amount of energy that may be obtained out of a small geometric area. See, e.g., Rust et al., WO2008/089110 and Long et. al, “Three-Dimensional Battery Architectures,” Chemical Reviews, (2004), 104, 4463-4492.

New anode and cathode materials have also been proposed as ways to improve the energy density, safety, charge/discharge rate, and cycle life of secondary batteries. Some of these new high capacity materials, such as silicon, aluminum, or tin anodes in lithium batteries have significant volume expansion that causes disintegration and exfoliation（剥離）from its existing electronic current collector during lithium insertion（挿入）and extraction（脱離）. Silicon anodes, for example, have been proposed for use as a replacement for carbonaceous electrodes since silicon anodes have the capacity to provide significantly greater energy per unit volume of host material for lithium in lithium battery applications. See, e.g., Konishiike et al., U.S. Patent Publication No. 2009/0068567; Kasavajjula et al., “Nano- and Bulk-Silicon-Based Insertion Anodes for Lithium-Ion Secondary Cells,” Journal of Power Sources 163 (2007) 1003-1039. The formation of lithium silicides when lithium is inserted into the anode results in a significant volume change which can lead to crack formation（割れ、亀裂）and pulverisation（粉砕）of the anode. As a result, capacity of the battery can be decreased as the battery is repeatedly discharged and charged.

Monolithic electrodes, i.e., electrodes comprising a mass of electrode material that retains its a shape without the use of a binder, have also been proposed as an alternative to improve performance (gravimetric and volumetric energy density, rates, etc) over particulate electrodes that have been molded（成形）or otherwise formed into a shape（形状）and depend upon a conductive agent or binder to retain the shape of an agglomerate of the particulate material. A monolithic anode, for example, may comprise a unitary（単一）mass of silicon (e.g., single crystal silicon, polycrystalline silicon, amorphous silicon or a combination thereof) or it may comprise an agglomerated（凝集）particulate mass that has been sintered or otherwise treated（処理）to fuse the anodic material together and remove any binder. In one such exemplary embodiment, a silicon wafer may be employed as a monolithic anode material for a lithium-ion battery with（状態）one side of the wafer coupled to a first cathode element through a separator, while the other side is coupled to a second cathode element opposing（対向）it. In such arrangements, one of the significant technical challenges（課題）is the ability to collect and carry current from the monolithic electrode to the outside of the battery while efficiently utilizing the space available inside the battery.

The energy density of conventional batteries may also be increased by reducing inactive component weights and volumes to pack the battery more efficiently. Current batteries use relatively thick current collectors since the foils that make up the current collectors are used with a minimum thickness requirement in order to be strong enough to survive the active material application process. Advantages in performance can be anticipated（期待、予測）if an invention was made in order to separate the current collection from processing constraints.

Despite the varied approaches, a need remains for（必要）improved battery capacity and active material utilization."

例示

US6061435
"It is understood, of course（もちろん、言うまでもなく）, that this is merely by way of example and not of limitation（例示、非限定）."

US8062975
"A need（必要、需要）continues to grow for more complex semiconductor (SC) devices and circuits able to（できる、可能）operate at higher and higher frequencies and handle（取り扱う、対応）increasing amounts of power and have lower unit cost. Many of these requirements create conflicting demands on semiconductor device and integrated circuit (IC) design and manufacturing technology. For example, and not intended to be limiting, most SC devices and ICs are fabricated in and/or on substrate wafers, usually but not always single crystal SC wafers, which are then cut up (“singulated”（単一化、ダイシング、分離）) into the individual devices or ICs. The manufacturing cost can be reduced by using larger and larger wafers, since more individual devices and ICs can be produced at the same time on larger wafers. However, to avoid undue wafer breakage, the wafer thickness must generally be increased as（につれて）the wafer diameter is increased.

 

If only one surface of the SC die or IC is available for fabricating devices and connections, the desired degree of complexity may not be achievable with present day（現在）structures and fabrication techniques. Further, as operating speed, power handling and wafer thickness increase, efficient heat removal （放熱、熱除去）from the resulting device or IC becomes more and more difficult. Thus, there is a strong desire（望み、所望、要求）to provide electrically and thermally conductive connections between the front and rear surfaces of the devices or ICs and to minimize the device and/or IC substrate thickness, without compromising mechanical robustness of the wafers during manufacture.

 

It is known to use conductor filled vias through SC wafers as a means of providing electrical and thermal connections between the front and rear surfaces of the wafer and resulting individual devices and IC die. These conductor filled vias are referred to as “through-substrate-vias” or “through-semiconductor-vias” and abbreviated as “TSV” (singular) or “TSVs” (plural). However, the desire to use larger diameter and therefore thicker wafers for cost efficient manufacturing and at the same time to provide highly conductive TSVs for electrically and/or thermally coupling the front and rear faces of the wafer and resulting die are in conflict（相反）. The thicker the wafers, the more difficult it is to etch and fill narrow TSVs with conductors（すればするほど）. However, if the vias are made larger, then greater wafer and die surface area must be devoted（確保）to such vias. In the prior art, thicker wafers have generally required larger area TSVs consuming greater device and IC surface area, thereby lowering the device and IC packing density on the wafer and increasing the device and IC manufacturing cost. Trying to use large diameter thin wafers so as to maintain the device area packing density reduces the mechanical stability of the wafers. It is well known that thin wafers break more easily during device and IC processing, thereby reducing the manufacturing yield and increasing the cost of the finished devices and ICs. Thus, a need continues to exist for improved SC device and IC structures and fabrication techniques that can provide minimal area TSVs for front-side-to-back-side interconnections and thin device or IC substrates for efficient heat removal, without significantly compromising（損なう）mechanical stability of the wafers during manufacturing."

"For simplicity and clarity of illustration（説明の容易、簡素化、分かり易さ、明確）, the drawing figures illustrate the general manner of construction, and descriptions and details of well-known features and techniques may be omitted to avoid unnecessarily obscuring the invention. Additionally, elements in the drawings figures are not necessarily drawn to scale（実寸）. For example, the dimensions（寸法）of some of the elements or regions or layers in the figures may be exaggerated relative to other elements or regions or layers to help improve understanding of embodiments of the invention.

 

The terms “first,” “second,” “third,” “fourth” and the like in the description and the claims, if any, may be used for distinguishing between（区別）similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation or fabrication in sequences or arrangements other than those illustrated or otherwise described herein. Furthermore, the terms “comprise（有する、具備）,” “include,” “have” and any variations thereof, are intended to cover non-exclusive inclusions, such that a process, method, article, or apparatus that comprises a list of elements or steps is not necessarily limited to those elements or steps, but may include other elements or steps not expressly listed or inherent to（固有）such process, method, article, or apparatus. The term “coupled（結合）,” as used herein, is defined as directly or indirectly connected in an electrical or non-electrical manner.

 

As used herein, the term “semiconductor” is intended to include any semiconductor whether single crystal, poly-crystalline or amorphous and to（toの繰り返し）include type IV semiconductors, non-type IV semiconductors, compound semiconductors as well as organic and inorganic semiconductors. Further（さらに）, the terms “substrate” and “semiconductor substrate” and “wafer” are intended to include single crystal structures, polycrystalline and amorphous structures, thin film structures, layered structures as for example and not intended to be limiting semiconductor-on-insulator (SOI) structures, and combinations thereof. The term “semiconductor” is abbreviated as “SC.” The terms “wafer” and “substrate”, singular or plural, are intended to refer to supporting structures that are relatively thin compared to their lateral surface area and used in connection with batch fabrication of electronic devices. Non-limiting examples（非限定）of such wafers and substrates include: semiconductor wafers, SOI wafers, and other types of supporting structures in or on which active and/or passive electronic elements and/or devices are fabricated or that are used in connection with the fabrication of such devices. As is common in the art of SC devices and integrated circuits (ICs), the term “metal” should be interpreted broadly so as to include any form of conductor and the term “oxide” should also be interpreted broadly so as to include any form of insulating dielectric. Non-limiting examples of such conductors are doped semiconductors, semi-metals, conductive alloys and mixtures, combinations thereof, and so forth（等）. Analogously, such insulating dielectrics may be organic or inorganic insulators. For convenience of explanation and not intended to be limiting, semiconductor devices and methods of fabrication may be described herein for silicon semiconductors but persons of skill in the art will understand that other semiconductor materials can also be used."

"By way of example and not intended to be limiting（例示、非限定）, for silicon wafers of ˜200 mm diameter, initial thickness 21 can be in the range of about 600 to 700 micrometers and for silicon wafers of ~（約、=about）300 mm diameter, initial thickness 21 can be in the range of about 700 to 800 micrometers, but other diameters and thicker or thinner wafers can also be used."

"In the example of manufacturing stage 101 and resulting structure 201, four cavities (e.g., blind vias) 30 of depth 31 are formed in substrate 20, but this is merely by way of example and not intended to be limiting（例示、非限定）. Any number of（いくつでも、何個でも）cavities (and eventual vias) 30 can be formed at the same time, spaced at various locations within or near（近く、近傍）device regions 26. In general, the lateral width of eventual vias 30 will correspond to lateral width 32 of mask openings 29 and cavities 30 and for convenience of description（説明のため、便宜上）reference number 32 is hereafter intended to also refer to the lateral width of eventual vias 30. It is desirable that（望ましい、好ましい）width 32 be as small as possible consistent with depth 31, that is, that（＊thatの繰り返し）cavities and vias 30 have an aspect ratio that is readily achievable in manufacturing. It has been found that（発見、見い出し、知見）vias having width 32 (e.g., “w”) usefully in the range of about 0.1 to 10 micrometers, more conveniently about 0.5 to 5 micrometers and preferably about 1 to 2 micrometers and depth 31 (e.g., “d”) usefully in the range of about 1 to 30 micrometers, more conveniently about 5 to 20 micrometers and preferably about 10 to 15 micrometers can be readily achieved and filled with highly conductive materials, typically metals, doped semiconductors and/or alloys or mixtures of such materials. It is desirable that depth 31 of cavities 30 exceed depth 27 of device regions 26, especially where（場合、場所）cavities 30 are closely spaced to transistors or other elements within device regions 26, but in other embodiments depth 31 may be shallower than device regions 26 depending upon the lateral location of cavities 30 relative to the transistors or other elements within device regions 26 and their desired operating potential relative to the conductors eventually provided in cavities 30."

であればよい、しさえすればよい、だけでいい、だけでよい

US5920699
"The switch will send periodic SAPs (in the same manner as a router) whenever they are received and no actual SAP and/or RIP timer in the switch is required. These packets are only used by other broadcast isolation switches, routers and servers. Therefore, further broadcast reduction occurs if the switch only sends SAPs out ports from which it received SAPs or a GSQ. Broadcast RIP response packets only need to（さえすればよい）be sent out ports that have routers connected (i.e. ports where broadcast RIP responses have been received). An override may be needed to allow RIPs and SAPs to be propagated out ports that did not send them out, should a listen-only router/server exist on those ports (e.g. old jet direct cards would need this information passed)."

US8515058
"Let us call this relaxation Recrypt′_ε. The main point of this relaxation is that WeakEncrypt does not need to be semantically secure for Recrypt′_ε to be a secure one-way proxy re-encryption scheme, or for Recrypt′_ε to be useful toward bootstrapping (as we will see below). Thus, depending on ε, WeakEncrypt_ε can be very simple—e.g., for some schemes, and in particular for the ideal-lattice-based scheme that we describe later, WeakEncrypt_ε might leave the input “bits” entirely unmodified. This will unfortunately not help us much in terms of making the encryption scheme bootstrappable; essentially, it will add one circuit level to what ε can evaluate. However, it will affect the eventual computational complexity of our scheme, since it will require less computation to apply the decryption circuit homomorphically to ciphertexts in which the outer encryption is weak. Another way of viewing this relaxation is that we only need to（するだけでよい、しさえすればよい）be able to evaluate non-uniform decryption circuits, where the ciphertext is “hard-wired” into the circuit (making this circuit simpler than the “normal” decryption circuit that takes the ciphertext (and secret key) as input."

US6575067
"Accordingly, in order to prevent movement of the front rail 201, the user need only to（するだけでよい、すればよい）rotate handle 117 about axis 109A, forcing the receiving portion 109R to move along axis 109A as the cam 116 and cam portion 109C become disaligned. The lower rail 201T is thus locked because of the downwardly force created by the receiving portion 109R."

US6728781
"The communication networks that we consider are not necessarily completely connected, but we assume that every pair of correct processes is connected through a fair path. We first consider a simple type of such networks, in which every link is assumed to be bidirectional⁸ and fair (FIG. 1a). This assumption, a common one in practice, allows us to give efficient and simple algorithms. We then drop this assumption and treat a more general type of networks, in which some links may be unidirectional and/or not fair (FIG. 1b). For both network types, we give quiescent reliable communication algorithms that use HB. Our algorithms have the following feature: processes do not need to know the entire network topology or the number of processes in the system; they only need to（するだけでよい）know the identity of their neighbors."

US7921443
"A demarcation device can be any device（どんなでも、であれば）capable of serving as an interface between a customer premises and a telecommunication service provider's network. Such devices can include, merely by way of example（例示）, set top boxes (which can be used, inter alia, as an interface between a customer's video appliance and a provider's video network), broadband modems (including xDSL modems, cable modems and wireless modems, each of which can be used to provide video and/or data to a customer premises（＊複数形）), integrated access devices (which can, for instance, translate between Voice over IP ("VoIP") signals and traditional telephone signals, thus allowing traditional telephones to connect to a VoIP network), devices compatible with the session initiation protocol ("SIP") familiar to those skilled in the art, and/or the like（等）."

US8078787
"An "intermediate device" as used herein can be any（どんなでも、であれば）device capable of being connected to a host device and an accessory at the same time. The intermediate device can be capable of communicating with the host and the accessory, in particular forwarding, or tunneling, commands from one of the host/accessory to the other. The intermediate device may also support other functionality, such as charging the host device and/or the accessory. In some instances, the intermediate device may be capable of being concurrently connected to multiple host devices and/or multiple accessories."

US7996324
"In this context, the self-service user interaction device may be any（どんなでも、であれば）device suitable for interacting with a transaction device, and receiving information from the transaction device user and providing the information to a merchant, account issuer, account manager, data set owner, merchant point of sale, and the like（等）."

参照符号の添え字、接尾辞

US7107124
"Controller means 70 are shown located beneath the table top 68 and include right and left controllers 72R and 72L for control of the respective right and left manipulators 24R and 24L. The right and left controllers are of substantially the same design so that a description of one applies to both. As with the manipulators, the suffixes（添え字）R and L are used to distinguish elements of the right controller from those of the left controller. For purposes of illustration（例示）, and not by way of limitation（非限定）, the right controller 72R is shown to comprise a housing 74R affixed to（固定）the bottom of table top 68 and from which hand-operated means 76R in the form of a telescopic control arm, or stick, extends."

US8814356
"FIGS. 2a-2e further illustrate the concept of retinal area with reference to an idealized basic model eye 10a. In these Figures elements that are common to natural eye 10 of FIG. 1 are indicated by the same reference numerals but with the addition of the suffix（添え字）`a`. It will be appreciated that the simulated cornea 12a can be a solid lens rather than a meniscus lens as shown, iris 14 can be a simple aperture disc and lens 16 can be an IOL under test. It is convenient to arrange model eye 10a so that its optic axis 20a is vertical and simulated cornea 12a is uppermost（最上部、位）to allow a test contact lens 45 to be rested（置く、配置）in correct alignment on the anterior surface of cornea 12a (as is known in the art) and it is convenient to construct the model eye so that the cornea, iris and lens are mounted in a replaceable `front-end` module to allow, for example, simulation of old or young eyes and of various corneal profiles, different IOLs and some eye pathologies. Of course, an appropriately arranged test spectacle（眼鏡、メガネ）lens (not shown) can be substituted for test contact lens 45."

露光装置

US4227090
"1. An electron beam microfabrication（微細加工）apparatus comprising:

a substantially spherically curved female surface for receiving thereon a patterned photocathode;

a semiconductor wafer holder positioned in front of said surface; and

a lens for focusing（焦点、集光）electrons emitted from said patterned photocathode onto a wafer on said wafer holder on a demagnification（縮小）scale so that when said photocathode is excited（励起）the patterned electron emission therefrom is focussed and demagnified and projected onto a resist on a wafer on said wafer holder for exposure（露光）thereon of a demagnified pattern（縮小パターンをウェーハ上に露光する＝露光（技術）により縮小パターンをウェーハ上に形成する；exposure of a pattern on wafer = formation of a pattern on wafer by exposure；electron emissionが当たっているのはレジスト）."

US6900001
(Abstract)
"It has now been surprisingly found that by exposing（露光）a photoresist to flood electron beam exposure in combination with optical exposure, that the pullback on the upper region of lithographic images in resist can be virtually eliminated during electron beam processing. This unexpected result is due to the fact that the electron beam exposure and optional bake（焼成）are carried out prior to development of the resist. This means that the resist shrinkage that is seen as a result of these steps is constrained（抑制）laterally by the resist film itself. Thus, the resist is free to shrink vertically, and the resulting shrinkage provides a reduction in the line slimming（（好ましくない）細線化、線痩せ？）and an improvement in the etch rate of the resist. This leads to the formation of a better resist image."

US7790583
(Abstract)
"One embodiment of the present invention is a method for cleaning an electron beam treatment（処理）apparatus that includes: (a) generating an electron beam that energizes（通電）a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached."

US7425716
"FIG. 1 is a simplified elevational view showing an electron beam exposure apparatus（露光装置）including the presently preferred embodiment of the new electron source"

上り、下り（回線）

US8903409
"The diagram shows schematically a portion of a receiver arrangement 10; this portion is often referred to as "front end". Such a receiver arrangement may be incorporated into user equipment（ユーザ装置）such as a mobile device. The receiver arrangement is shown divided into two circuit blocks 16a and 16b as shown. Although shown separately for clarity, in one example, they are integrated on the same IC chip. The upper circuit block 16a shows receiver circuitry associated with a primary antenna 9a in respect of a primary channel, and the lower circuit block 16b shows receiver circuitry associated with a second antenna 9b in respect of a second (diversity) channel Thus the receiver is adapted for downlink（下り）MIMO operation. It is to be noted that circuit blocks 16a and 16b are substantially identical in design. Therefore, any reference to one of the circuit blocks is appropriate to the other."

US8582638
(Abstract)
"A method for communicating channel state information (CSI) to a base station is presented. The method includes identifying a number of allocated resources for CSI within at least one of a Physical Uplink Control CHannel（物理上りリンク制御チャネル） (PUCCH) payload and a Physical Uplink Shared CHannel (PUSCH) payload. The method includes encoding channel state information (CSI) for activated carriers on a user equipment（ユーザ装置）into the allocated resources for CSI. When a number of activated carriers on the user equipment is less than the number of allocated resources for CSI, the method includes using repetition encoding to duplicate the CSI for at least one of the activated carriers on the user equipment into the allocated resources for CSI."

user equipment (UE)

US9013974(QUALCOMM INC [US])
"User terminals 120 may be dispersed throughout the system. Each user terminal may be a fixed or mobile terminal that can communicate with the access point. A user terminal may also be referred to as a mobile station, a remote station, an access terminal, a user equipment (UE)（ユーザ装置）, a wireless device, or some other terminology. Each user terminal may communicate with one or possibly multiple access points on the downlink （ダウンリンク、下り回線）and/or uplink （アップリンク、上り回線）at any given moment. The downlink (i.e., forward link) refers to transmission from the access point to the user terminal, and the uplink (i.e., reverse link) refers to transmission from the user terminal to the access point. In FIG. 1, access point 110 a communicates with user terminals 120 a through 120 f, and access point 110 b communicates with user terminals 120 f through 120 k. Depending on the specific design of system 100, an access point may communicate with multiple user terminals simultaneously (e.g., via multiple code channels or subbands) or sequentially (e.g., via multiple time slots). At any given moment（いつでも、任意の時間、「任意所与」？）, a user terminal may receive downlink transmissions from one or multiple access points. The downlink transmission from each access point may include overhead data intended to be received by multiple user terminals, user-specific data intended to be received by specific user terminals, other types of data, or any combination thereof. The overhead data may include pilot, page and broadcast messages, system parameters, and so on.（等）"

"9. A user equipment (UE), （ユーザ装置）comprising processing circuitry arranged to （構成）communicate with an evolved NodeB (eNB) of a Long Term Evolution or Long Term Evolution-Advanced (LTE/LTE-A) network and to establish a device-to-device wireless connection for direct device-to-device communications with a second wireless communications device using a wireless network independent of the LTE/LTE-A network, by performing operations to: broadcast（報知）a device-to-device communication discovery request to the wireless network, the broadcast including information to identify the UE; extract image authentication data in a communication response received from the second wireless communications device over the wireless network, the communication response received in response to the broadcast of the device-to-device communication discovery request, wherein the image authentication data includes a digital image from the second wireless communication device; compare the image authentication data received from the second wireless communications device to （比較する）pre-stored image authentication data maintained for a plurality of recognized wireless communication devices; and in response to a match of the image authentication data in the pre-stored image authentication data, establish a device-to-device connection with the second wireless communications device."

US9178648(ALCATEL LUCENT [FR])
(Abstract)
"In one embodiment, a message is sent from the wireless network to a user equipment （ユーザ装置）having a variable rate vocoder. The message defines transport block sizes for the user equipment to select from in making uplink transmissions if the user equipment is permitted to vary a packet size for uplink transmission. A scheduling grant is sent to the user equipment, and the scheduling grant includes an indicator indicating that the user equipment is permitted to vary the packet size for uplink transmissions by selecting a transport block size from among the defined transport block sizes."

US8918453(QUALCOMM INC [US])
"1. A method of operating an application server configured to arbitrate a communication session between a plurality of user equipments (UEs)（ユーザ装置）, comprising: receiving, from a given UE, data that is configured to visually represent physical user input that is detected at the given UE at a first level of precision（精度）; determining data presentation capabilities of at least one target UE and/or a performance level associated with a connection between the application server and the at least one target UE; selectively transitioning（遷移、推移；＊普通は自動詞）the received data from the first level of precision to a second level of precision and a third level of precision based on the determination, the third level of precision being an intermediate level of precision between the first and second levels of precision; and transmitting the selectively transitioned data to the at least one target UE for presentation by sending the selectively transitioned data with the second level of precision to a first set of target UEs and sending the selectively transitioned data with the third level of precision to a third set of target UEs."

"In W-CDMA wireless communication systems, user equipments (UEs)（ユーザ装置）receive signals from fixed position Node Bs (also referred to as cell sites or cells) that support communication links or service within particular geographic regions adjacent to or surrounding the base stations. Node Bs provide entry points to an access network (AN) or radio（無線）access network (RAN), which is generally a packet data network using standard Internet Engineering Task Force (IETF) based protocols that support methods for differentiating traffic based on Quality of Service (QoS) requirements. Therefore, the Node Bs generally interact with UEs through an over the air（空中、無線、空気）interface and with the RAN through Internet Protocol (IP) network data packets."

US20120303743(QUALCOMM INC [US])
"65. A non-transitory（非一過性、非一時的）computer-readable medium containing instructions stored thereon（保存した）, which, when executed（実行）by a server configured to arbitrate a coordinate-sharing communication session between a plurality of user equipments (UEs)（ユーザ装置）, cause the server to perform operations（演算）, the instructions comprising: program code （＊無冠詞）to monitor, during a coordinate reception period (CRP), for coordinate packets from the plurality of UEs that indicate information associated with media content（＊無冠詞）that is being displayed at each of the plurality of UEs; program code to receive, from at least one of the plurality of UEs, a coordinate packet during the CRP that indicates a selection of a coordinate of a visual representation of the media content by user input at the at least one UE; program code to format the selected coordinate from the received coordinate packet into a set of coordinate output frames configured to indicate coordinate selections by the plurality of UEs during the CRP; and program code to transmit the set of coordinate output frames to the plurality of UEs."

により、によって、のお蔭で、のために

US5784740
"Referring further to FIGS. 2 and 3, the actuator support tube 70 includes a transverse head portion 74 having a boss 76 formed thereon and operable（動作可能、作用、構成、するよう；＊cf. adapted, configured, etc.）to form a pivot connection between the ramp 40 and the actuator 56 at the face plate 46, thanks to（により、基づき、お蔭で）the provision of a clevis 77 and clevis pin 78, as shown in FIG. 3. A generally（概して、略）cylindrical flange member 80 is sleeved over（スリーブを構成し？）the tube 70 in slidable relationship thereto and engages one end of an elongated（長尺）coil compression spring 82 which is disposed between the flange 80 and the flange 69 and sleeved over the tubes 63 and 70. A transverse pin 84 extends through opposed（対向）, elongated, longitudinal（長手）slots 86 formed in the tube 70. The pin 84 is also secured to the distal end（先端、末端）of the actuator tube member 62 so that, when this member is extended by rotation of the screw 58 in registration with（整合）the nut 60, the flange 80 will be extended toward head portion 74 of tube 70 until the pin 84 engages（係合）the upper ends of the slots 86 and causes the tube 70 to raise the ramp 40, for example. The screw 58 may be rotated in the opposite direction to retract（格納、収納、後退）the extensible tube member 62 in sleeved relationship within the support tube 63, compressing the spring 82 as the flange 80 moves toward the flange 69. This action leaves the tube 70 free to move in a reciprocal telescoping fashion（往復伸縮自在）with respect to the tube 63 if, for example, the ramp 40 is caused to move up and down about its hinge means 39. Such action by the ramp 40 may occur frequently in response to movement of a vehicle loadbed relative to dock 33, at which the apparatus 20 is disposed in a conventional manner. Accordingly, in response to rotation of the screw 58 in one direction by the motor 64, the nut 60 and extensible actuator tube member 62 is extended outward from the tube 63 until the pin 84 engages the ends of slots 86 in tube 70 and raises the ramp 40 about its hinge means 39. At any time, the actuator 56 may be reversed to cause the tube member 62 and flange 80 to retract toward the housing 66 thereby allowing the tube 70 to move in telescoping relationship over the support tube 63, at will（任意）."

バリ

US6551685
"What is claimed is:

1. An in-mold（インモールド）label, comprising: a substrate, said substrate having a first surface for engaging a mold surface and opposed（対向）second surface for engaging an article being molded（被モールド品、モールド対象物）, an adhesive applied to said second surface, and a plurality of perforations through said substrate, said plurality of perforations extending from said first surface through said second surface causing said second surface to be roughened（粗くする、粗面化）."

"In Takatori et al. U.S. Pat. No. 5,804,127, the reference teaches a laminating blow molding method. A resin sheet has 1 to 500 fine holes per 100 cm² punched therein to form projections（突起）thereon as burrs（バリ）. These burrs side（バリ側）of the resin sheet is placed in a blow mold so that the burrs face the cavity face. After the parison is blown, the mold is heated to a temperature exceeding the softening temperature of the resin sheet so（＊多分so as toの誤記）squash the fine holes so that they substantially do not remain in the resin sheet. See, for example, FIGS. 5A and 5B. In Takatori, it is the non-burr side of the resin sheet（＊that抜け）is the side which will engage the hollow article being made. In contrast to the teachings of Takatori, the molds used with the labels of the present invention are cooled and not heated."

"With reference to FIGS. 1-6, the in-mold label 10 of the instant invention is shown having an exterior surface 12 and an interior surface 14. A plurality of perforations 20 are made in the label 10 from the surface 12 toward the surface 14, thereby creating a plurality of rough openings or burrs 22 on surface 14. In the preferred embodiment shown, the surface 14 includes a patterned adhesive 30. As seen in（示す）FIG. 6, a label 10 has been attached to a molded article 2.

This was accomplished by placing the label 10 into a mold such that the surface 12 is adjacent the mold so that the surface 14 with burrs 22 and adhesive 30 receives the parison blown into the mold. The test results, explained later, demonstrate that this combination of burrs 22 and patterned adhesive 30 on surface 14 significantly reduce air-entrapped blistering during the molding process, blistering being the retention of air between the label 10 and the article 2."

同時二軸延伸

US6203921
(Abstract)
"A multilayer polyester film, and a method for making the same, is provided. The film consists of alternating layers of polyethylene terephthalate (14) and polyethylene naphthalate (12). Biaxial orientation（二軸配向（＝延伸？））and subsequent restrained（抑制、制限）heat setting of these materials results in thin films with tensile moduli in both stretch（延伸）directions well in excess of（超える）the values obtained with monolithic films of either material. In some embodiments, a slippery surface is imparted to（与える）the film without the use of conventional slip agents."

"These results are depicted graphically in FIG. 2. FIG. 2 demonstrates（明示）that each composition develops（生ずる、発生）a monotonically increasing Young's Modulus as the simultaneous biaxial stretch（同時2軸延伸）ratio is increased."

密着、接着、接触

US5986885
"Metal sponge 40 is placed in close contact with（密着）the second surface 25b of die attach paddle 25."

"This removes the risk of an electrical short if the leads accidentally contact（接触）the heatsink."

"A thermally conductive sponge contacts（接触）the second surface 25b of the die attach paddle."

US4144305
"1. In the method of producing molded plastic parts wherein first and second thermosetting resin layers are positioned between male and female dies and shaped, bonded and cured under applied pressure and heat, the improvement comprising: superimposing（重畳、重ね合わせ）a first layer of moldable thermosetting material which contains a mold release agent and a crosslinking monomer against one side of a sheet of thermoplastic polymeric material the polymer of which absorbs said mold release agent when heated, placing a second layer of moldable thermosetting material which contains a crosslinking monomer, and a mold release agent that is absorbable by said thermoplastic polymer against the other side of said thermoplastic sheet to form a composite, said sheet of thermoplastic polymer being but a few mils thick, and being dissolvable at molding temperatures by said cross linking monomers, compressing the composite to force the three materials into intimate contact（密着）, and curing the thermosetting layers by the application of heat while the layers are in intimate contact with（密着）the thermoplastic material, thereby adhering（接着）the cured second layer of thermosetting material to the first layer of cured thermosetting material by means of said sheet of thermoplastic material."

US5198283
"Depression 122 avoids intimate heat contact with（熱密着？）sheet 50 and thus heat insulates graphic symbol 18 so as to prevent variation of the ink upon the sheet."