US2022367552(SONY SEMICONDUCTOR SOLUTIONS CORP [JP])
[0110] The semiconductor layer 100 S includes, for example, a first pinning region 113 and a second pinning region 116 .
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半導体層１００Ｓには、例えば、第１ピニング領域１１３および第２ピニング領域１１６が設けられている。
The first pinning region 113 is provided in proximity to the back surface of the semiconductor layer 100 S, and is disposed between the n-type semiconductor region 114 and the fixed electric charge film 112 .
第１ピニング領域１１３は、半導体層１００Ｓの裏面近傍に設けられており、ｎ型半導体領域１１４と固定電荷膜１１２との間に配置されている。
The second pinning region 116 is provided on a side surface of the pixel separation section 117 , specifically, between the pixel separation section 117 and the p-well layer 115 or the n-type semiconductor region 114 .
第２ピニング領域１１６は、画素分離部１１７の側面、具体的には、画素分離部１１７とｐウェル層１１５またはｎ型半導体領域１１４との間に設けられている。
The first pinning region 113 and the second pinning region 116 each include, for example, a p-type semiconductor region.
第１ピニング領域１１３および第２ピニング領域１１６は、例えば、ｐ型半導体領域により構成されている。
ChatGPT:
In semiconductor devices, a "pinning region" is typically an area within a pixel, often in image sensors, designed to control or "pin" the potential of certain parts of the device. In pinned photodiodes, for instance, the pinning region sets a fixed potential level at the surface, which helps reduce dark current (unwanted signal generated in the absence of light) and improves noise performance.
The pinning region achieves this by creating a strong electric field or potential barrier, preventing charge carriers (like electrons) from accumulating at the surface. This controlled potential helps stabilize the device, enhances charge transfer efficiency, and improves the overall quality of the sensor's output, especially in low-light conditions.
