device whereby/with which

US8789939(Google)
In use, the cartridge of the invention is inserted into an appropriately configured printer device whereby（＊先行詞は前文）the drive gear 21 aligns with and engages a corresponding driven gear provided on the printer mechanism. The advantages of this configuration are numerous. Most importantly, the provision（＊設ける）of the transportation means within the cartridge ensures that the paper or other print media is fed out of the cartridge accurately and with minimum initial contamination, as the mechanism and print media are housed within an enclosed unit. In cartridges of the prior art, the cartridge is pressed onto a pick up roller mounted in the printer device, which exposes the paper on the underside（＊裏側、裏面、背面）. By contrast, the present design allows for greater structural integrity as（＊なので、ため、理由、because）there is no need to provide an opening that exposes the print media to that same extent. Further, the design provides for（＊もたらす、得る事を可能）a tamper proof unit.

US8391719(Google)
Abstract
Methods and systems for conducting communication（＊通信を行う）between mobile devices are disclosed herein. In one embodiment, a method of achieving communications（＊通信を達成）between first and second mobile devices that are in proximity with one another includes transmitting a first signal from the first mobile device and receiving a first reflected signal at that（＊その、前記、同、該、当該）mobile device, the first reflected signal being the first signal reflected by an object in proximity to that mobile device. The method also includes transmitting a second signal from the first mobile device for receipt by the second mobile device upon being reflected by the object, and receiving a confirmation signal from the second mobile device in response to the second signal. The method further includes achieving a paired relationship of the first mobile device relative to the second mobile device, whereby（＊achievingに係る、so that）because of the paired relationship the first and second mobile devices are capable of additional communications therebetween.

US10582464(Google)
The new master device 305 can establish 330 an additional audio playback session with the new slave device 304, similar to 230 as discussed with respect to FIG. 2. The new master device 305 can send 332 a portion of the additional audio file to the new slave device as well as a new timing instruction using the additional audio playback session, whereby（＊whereinの方が良い？）the new timing instruction can include a current system time of the new master device 305. The new master device 305 can initiate 334 playback of the additional audio file and the new slave device 304 can initiate 336 playback of the additional audio file according to the new timing instruction as well as the new system clock offset value resulting from 350, similar to 234 and 236 as discussed with respect to FIG. 2. Thus the old slave device 305 becomes the new master device whereby（＊その結果、so that, such that）the playback commands 242, the sync confirmations 240, 241, and the additional audio file portions transmittals 238 are still active, but now for the new master device.

US8958018(Google)
15. The method according to claim 8, further comprising the step of displaying media on the primary display screen under control of the primary electronic device that is uninterrupted during said steps of transmitting information to the secondary device, displaying the information on the secondary display screen, and collecting user input on the secondary device whereby（＊先行詞はdeviceではない）the display of media on the primary display screen remains uninterrupted until an operational command is transmitted.

US7228418(Google)
When the Transferring Node transfers a session to the Target Node, all of the Transferring Node's IP traffic is transferred to the Target Node. This is convenient when a session has multiple flows, as（＊なので、理由、because）all of the flows are transferred together. However, if the Transferring Node simultaneously has other active sessions, they will also be transferred. For simple devices that only have one active session at a time, such as a wireless videophone, this may not be an issue. However, for more complex services, a method and apparatus supporting a plurality of IP addresses at the first destination device whereby（＊先行詞はmethod and apparatus；複数のアドレスをサポートする方法および装置であって、該複数のアドレスのうち１つが～される方法および装置が望ましい）a unique IP address from the plurality of IP addresses is assigned to a unique transferable session may be desirable. Such a system is depicted in FIG. 2 a and FIG. 2 b.

AU2008205032(Apple)
A user of the host computer 1302 can select and play back a media asset stored within the host data storage device 1310 through use of（＊を用いて）the media management application 1308. Typically, the host computer 1302 will include or couple to a display device whereby（＊前文全体なら=so that, display deviceなら=such that）the playback of the media asset can provide visual media output (e.g., display device) and/or audio media output (e.g., a speaker). The display device can also support a graphical user interface that provides menus, user interface (UI) controls, etc. that assist a user in interacting with the host computer 1302 while selecting and playing media assets.

 

wherebyは直前の名詞に係る場合よりも前文全体に係り結果や目的（so that, such that）を表す場合が多い？

US9317709(Google)
Abstract
A cloud storage system（＊不定冠詞だが本発明の）provides remote access to a file associated with the cloud storage system. In response to a request to access the file, the cloud storage system identifies applications available to the request generator and capable of accessing the file, which may include both online web-based applications and applications installed on a device with which（＊を用いて、手段）the user is accessing the file. The cloud storage system determines an application type of an identified application, and provides file access to the identified application based on the application type.

US10257686(Google)
12. The electronic device of claim 10, wherein the instructions are configured to cause the one or more processors to:

authenticate identity of the electronic device by sending a device identifier for the electronic device to the commissioning device with which（＊を用いて、手段；先行詞はdevice identifier）the electronic device verifies identity upon connection to the commissioning device; and

establish a secure communication session with the commissioning device using the device identifier, the secure communication session being established through a secure tunnel and via an assisting device.

毛髪の量

WO2018213651
Hair volume
【００７１】
  毛髪の量感

(i) Preparation of hair switch
（ｉ）ヘアピースの準備

 

For the volume measurement, 15 gram hair switch with a length of lOinch are used. The hair switches are prepared by following steps:
体積の測定には、長さ１０インチの、１５グラムのヘアピースを使用する。ヘアピースは以下の工程により準備する。

 

WO2017140802

Silicone extraction
【０１５９】
シリコーンの抽出

 

For each hair tress, 100ml polyethylene bottles were tarred.
各毛束のために、１００ｍｌのポリエチレン瓶の風袋を秤量した。

 

The hair tress was introduced in the bottle while maintaining the mounting tab outside the bottle.
瓶の外部の取り付けタブ（ｍｏｕｎｔｉｎｇ  ｔａｂ）を維持しながら、瓶の中に毛束を入れた。

 

The hair was cut just below the mounting tab and the amount of hair introduced in the bottle was recorded.

取り付けタブのすぐ下で毛髪をカットし、瓶の中に入れた毛髪の量を記録した。

単位ユニット

WO2007025146
Pharmaceutical preparations, in the form of, for example, tablets, caplets, and capsules may contain from about 100 mg to about 1400 mg of the pharmaceutical composition (i.e., balsalazide and excipient(s)), more preferably from about 700 mg to about 1200 mg of the composition.
【００５４】
  医薬製剤は、例えば、錠剤、カプレット、およびカプセルの形態で、医薬組成物の約１００ｍｇ～約１４００ｍｇ（即ち、バルサラジドおよび賦形剤（単数または複数））、より好ましくは組成物の約７００ｍｇ～約１２００ｍｇを含んでもよい。

Specific single unit dosage forms of the invention contain 50, 100, 150, 200, 250, 300, 350, 400, 450, 500, 750, 1000, 1100, 1200, 1300, 2000, 2500, 3000, or 3300 mg of active ingredient. 
本発明の特定の単位ユニット剤形は、５０、１００、１５０、２００、２５０、３００、３５０、４００、４５０、５００、７５０、１０００、１１００、１２００、１３００、２０００、２５００、３０００、または３３００ｍｇの有効成分を含む。

EP2807223
"polymer" means the polymerization product of one or more monomers and is inclusive of homo-, co-, ter-, tetra-polymers, etc.;
  「ポリマー」は１種以上のモノマーの重合生成物を意味し、ホモ－、ジ－、ター－、および、テトラ－ポリマーなどを含む。

"mer" or "mer unit" means that portion of a polymer derived from a single reactant molecule (e.g., ethylene mer has the general formula— CH2CH2— );
「単量体単位」または「単量体単位ユニット(mer unit)」は、単一の反応体分子から得られたポリマーの部分を意味する。例えば、エチレン単量体単位は、一般式  －ＣＨ_２ＣＨ_２－  を有する。

WO2018108743
[0031] In connection with various embodiments of the present disclosure, low cost microbolometers today have pixel counts starting at 80 by 60 for a total of 4800 pixels.
【００２０】
  本開示の各種実施例に関し、今日の低コストのマイクロボロメータは、80×60で始まり、全体で4800画素の画素カウントを有する。

Each pixel element is a temperature sensitive resistive material made from vanadium oxide or amorphous silicon.
各画素素子は、酸化バナジウムまたはアモルファスシリコンで構成された、温度検知抵抗材料である。

Microbolometers, once exclusively used in military applications have now been established in the commercial arena and have thus greatly been reduced in cost.
かつては軍用途に排他的に使用されてきたマイクロボロメータは、現在、市販されるようになり、従って、コストが大きく低減されている。

Like in the visible CMOS image sensor market, it is forecasted that pixel count and sensitivity for microbolometers will keep increasing as volume production increases with cost per unit decreasing.
CMOSイメージセンサの市場と同様、マイクロボロメータの画素カウントおよび感度は、単位ユニット当たりのコストの低下とともに大量生産が増え、上昇し続けることが予測されている。

EP2632613
[0078] In another embodiment depicted in Fig. 7b , at least a portion of the engineered surface 700 comprises a plurality of structure geometries.
【００７５】
  図７ｂに示される別の実施形態において、加工表面７００の少なくとも一部分は、複数の構造幾何形状を含む。

For example, a unit cell including a pyramidal projections is directly adjacent a unit cell including a post.
例えば、角錘の突出部を含む単位セルは、ポストを含む単位セルに直接隣接する。

Each unit cell is still defined at least partially by a dimension at least approximating, preferably equal to, the pitch and includes a single microstructure.
各単位ユニットは、ピッチに近似する、好ましくは、それと同等の寸法によって、少なくとも部分的に更に画定され、単一のミクロ構造を含む。

WO2016039959
[00124] In the example shown, cabinet frame 1100 also includes reinforcing front-to-back beams 1145 to increase the overall rigidity of cabinet frame 1100, making electronics cabinet 1000 more resistant to impact deformation.
【００４０】
  図示される実施例において、キャビネットフレーム１１００はまた、キャビネットフレーム１１００の全体の剛性を高めることで電子機器キャビネット１０００の耐衝撃変形性を高める、補強前後梁１１４５を含む。

In the particular example shown, each of the reinforcing front- to-back beams 1145 consist of a three piece assembly and are welded, or otherwise securely fastened or connected, to between vertical posts 1125.
図示される特定の実施例において、補強前後梁１１４５のそれぞれは３部品のアセンブリから成り、垂直柱１１２５間に溶接されるか、または確実に固定されるか、もしくは接合される。

However, reinforcing front- to-back beams 1145 can also be a single, unitary unit. 
しかし、補強前後梁１１４５はまた、単一の単位ユニットであってもよい。

脳

US10271087
In some aspects, the media guidance application (or a user device upon which the media guidance application is implemented) may incorporate and/or have access to an electroencephalogram unit (“EEG”) indicating a first frequency range of voltage fluctuations in the brain activity of a user and/or an electromyogram unit (“EMG”) indicating first electrical activity of muscles near a brain（＊不定冠詞）of the user at rest and during contraction. 

US10357660
SUMMARY OF THE INVENTION

Described herein, in certain embodiments, are methods and systems for modulating the electrical activity of a brain（＊不定冠詞）. Described are methods and devices for modulating the electrical activity of a brain that involve no medication. Methods and devices described herein gently “tune” the brain and affect mood, focus, and cognition of human subjects. Methods and devices described herein gently “tune” the brain and affect mood, focus, and cognition of subjects.

In one aspect are methods of modulating the electrical activity of a brain in a subject in need thereof, comprising: (a) adjusting output of a magnetic field for influencing an intrinsic frequency of a specified EEG band of the subject toward a target intrinsic frequency of the specified EEG band; and (b) applying said magnetic field close to a head（＊不定冠詞）of the subject.

In another aspect are methods of altering an intrinsic frequency of a brain of a subject within a specified EEG band, comprising: (a) determining the intrinsic frequency of the subject within the specified EEG band; 

US20090005827

1. An apparatus for stimulating the neurochemistry of the brain（＊定冠詞）of a subject, said apparatus comprising:

a goggle member including a pair of eye shields, said eye shields having a periphery;

at least one light disposed about said periphery of each of said eye shields a distance of between 1½ and 2½ inches from the retinas of the subject; and

circuit means to drive said at least one light at a frequency of between 1-1200 Hz.

 

TECHNICAL FIELD
• [0004]
  The present invention relates generally to the field of brain stimulation, and more particularly to increases in brain chemistry for enhancing overall brain function, including cognitive abilities and intelligence quota (IQ), utilizing full spectrum white light applied to both eyes or only to one eye, at frequencies ranging from 1-1200 Hz, omitting 55-65 Hz to avoid seizure. Both “fuzzy” light and “fuzzy” sound are an integral part of the method, and are controlled though computerized sessions, which can be downloaded to any existing light/sound device. More specifically, this is an apparatus and method for enhancing overall brain functions, including cognitive abilities and intelligence quota (IQ). Other treatment interventions this apparatus and method can positively affect include neurological, physiological, and psychological disorders and diseases.
BACKGROUND INFORMATION AND DISCUSSION OF RELATED ART
• [0005]
  Brainwave states are derived from natural frequencies occurring within the cortex, but can be altered through the use of light and sound driven devices. When a light emitting goggle or light frame is worn over the eyes, any lights flickering at specific frequencies for a length of time will cause a reaction in brainwave activity. For example, if the light goggles are set to flicker at 13 Hz for a ten to twenty minute period of time, the brainwave activity will slow or become faster and match, or “entrain” to the 13 Hz frequency. This action is typically called “entrainment” or “frequency following response” (FFR). This is a common process utilized by most light/sound devices to guide the user into desired brainwave states.
• [0006]
  Light and sound stimulation therapy utilizes a variety of light/sound devices, to alter brainwave activity, regulate circadian rhythms, and treat seasonal depressive disorder, for example. Light/Sound devices have been employed for improvements in relaxation, cognitive development, peak performance, problem solving abilities, and to increase test scores in learning disabled. children.
• [0007]
  Previous animal studies have indicated that animals placed in enriched and stimulating environments result in higher learning and increases in brain weight and density. Effects of stimulation in the human brain（＊定冠詞）have been positive. Postmortem human studies revealed that subjects exposed to challenging and stimulating environments demonstrate greater dendritic length and structural changes in the cortex.

US7214658

Abstract

The present invention provides specific methods of using and administering etanercept to improve cognitive function in a human, for both the treatment and prevention of cognitive impairment, or, alternatively, to enhance cognitive function including Alzheimer's Disease, Idiopathic Dementia, and Traumatic Brain Injury. The methods of the present invention include the perispinal administration of etanercept. For the purposes of this patent “perispinal” is to be considered as referring to “perispinal extrathecal;” therefore direct intrathecal administration is excluded. Perispinal administration leads to enhanced delivery of etanercept to the brain（＊初出で定冠詞）in a therapeutically effective amount, via the vertebral venous system and/or the cerebrospinal fluid. Delivery of etanercept to the brain utilizing the methods of the present invention includes the use of the vertebral venous system to deliver etanercept to the brain via retrograde venous flow. Physical maneuvers are used to enhance delivery of etanercept to the brain via this route.

 

For the purposes of this patent perispinal administration excludes intrathecal administration, which carries additional risks of infection and hemorrhage. Therefore in this patent “perispinal” is more exactly defined as “perispinal (extrathecal)”, but for the purposes of brevity shall be designated throughout simply as “perispinal”. Perispinal administration leads to enhanced delivery of etanercept to the brain（＊詳細な説明内初出で定冠詞）in a therapeutically effective amount.

署名付き

WO2018217511
[0077] In some embodiments, a shard verifier that becomes inactive may be required to first ensure that the data (e.g., transaction, consensus, and/or other data) for the shard is made sufficiently available in a storage service 109.
【００７１】
  いくつかの実施形態において、非アクティブになったシャードベリファイアは、先ず、シャードに関するデータ（たとえばトランザクション、コンセンサス、および／またはその他のデータ）がストレージサービス１０９において十分利用できるようにされることを保証することが求められる可能性がある。

For example, the verifier may be configured to send the data to one or more storage nodes of the storage service 190.
たとえば、ベリファイアは、ストレージサービス１９０の１つ以上のストレージノードにこのデータを送信するように構成することができる。

Additionally in some embodiments, the verifier may also be configured to receive (and/or authenticate) signed confirmations that the data has been stored.
加えて、いくつかの実施形態において、ベリファイアはまた、このデータが格納されたという署名付きの確認を受信する（および／または認証する）ように構成することができる。

Decoupling of storage from processing (e.g., using a separate storage service 190) may, in some embodiments,
いくつかの実施形態において、（たとえば別個のストレージサービス１９０を用いて）ストレージを処理から切り離すことは、

enable data to be replicated enough times to be highly likely to be available, while possibly avoiding excessive requirements (e.g., such as having all participants store all data).
データを十分な回数レプリケートすることにより利用できるようになる見込みを高める一方で、過剰な要求（たとえばすべての参加者にすべてのデータを格納させる等）を場合によっては避けることを可能にする。

WO2018160863
[0041] As used herein, the term "secure channel" refers to either a dedicated path for communicating data (i.e., a path shared by only the intended participants)
本明細書で使用する「セキュアチャネル」という用語は、データを通信するための専用経路（すなわち、意図された参加者のみによって共有される経路）

or communicating encrypted data or signed data using cryptographic keys known only to the intended participants.
又は意図された参加者のみに既知の暗号鍵を使用して暗号化されたデータ若しくは署名付きデータを通信するための専用経路のいずれかを指す。

In the illustrated embodiment, the notation (KENC,KMAC)(data)
例示された実施形態では、表記（ＫＥＮＣ、ＫＭＡＣ）（データ）は、

denotes an encryption operation using KENC and a hashing operation using KMAC (where the hash output may be used to protect the integrity of the key exchange).
ＫＥＮＣを使用する暗号化動作及びＫＭＡＣを使用するハッシング動作（このハッシュ出力は、鍵交換の完全性を保護するために使用され得る）を意味する。

AP 136, in the illustrated embodiment, extracts the system public key systemPK from the encrypted certificate system. Cert using the shared secret at 324.
ＡＰ１３６は、例示された実施形態では、３２４で、共有シークレットを使用して、暗号化された証明書ｓｙｓｔｅｍ．Ｃｅｒｔからシステム公開鍵ｓｙｓｔｅｍ．ＰＫを抽出する。

配線層

WO2017142817
The microdriver chip devices (e.g. driver transistors, emission control transistors, switching transistors, etc.) may be formed in the device layer and interconnected in the build-up layer 106,
マイクロドライバチップデバイス（例えば、ドライバトランジスタ、発光制御トランジスタ、スイッチングトランジスタなど）はデバイス層に形成かつビルドアップ層１０６にて相互配線することができ、

which may include one or more interconnect layers (e.g. copper interconnects) and insulating layers (e.g. interlayer dielectrics, ILDs),
ビルドアップ層は、１つ以上の相互配線層（例えば、銅相互配線）及び絶縁層（例えば、層間絶縁膜、ＩＬＤ；interlayer dielectric）を含むことができ、

culminating in a plurality of landing pads 110 at the top of the build-up layer 106. For example, the landing pads 110 may be formed of copper.
複数のランディングパッド１１０としてビルドアップ層１０６の上部で頂点に達する。例えば、ランディングパッド１１０を銅で形成することができる。

US2020017972
In one embodiment, substrate 901 includes metallization interconnect layers for integrated circuits.
一実施形態では、基板９０１は、集積回路用の金属被覆配線層を含む。

In one embodiment, substrate 901 includes electronic devices, e.g., transistors, memories, capacitors, resistors, optoelectronic devices, switches, and any other active and passive electronic devices that are separated by an electrically insulating layer, for example, an interlayer dielectric, a trench insulation layer, or any other insulating layer known to one of ordinary skill in the art of the electronic device manufacturing.
一実施形態では、基板９０１は、例えばトランジスタ、メモリ、コンデンサ、レジスタ、光電子デバイス、スイッチ、及び例えば層間絶縁膜、トレンチ絶縁層、又は電子デバイス製造業者に周知の他の何らかの絶縁層等の電気絶縁層によって分離された他の任意の能動及び受動電子デバイス等の電子デバイスを含む。

In at least some embodiments, substrate 901 includes interconnects, for example, vias, configured to connect the metallization layers.
少なくとも幾つかの実施形態では、基板９０１は、金属層を接続するように構成された例えばビア等の配線を含む。

In one embodiment, substrate 901 is a semiconductor-on-isolator (SOI) substrate including a bulk lower substrate, a middle insulation layer, and a top monocrystalline layer.
一実施形態では、基板９０１は、バルク下部基板、中間絶縁層、及び上部単結晶層を含む絶縁膜上に半導体が形成された（ＳＯＩ）基板である。

The top monocrystalline layer may comprise any material listed above, e.g., silicon.
上部単結晶層は、例えばシリコン等の上述したいずれかの材料を含みうる。

WO2012173770
In alternate embodiments, the threshold between Ii and I₂ is
代替の実施形態では、Ｉ_１とＩ_２の間の閾値は、

demarked by a threshold associated for any of the mask material (generally in the range of 0.0001 GW/cm and 0.001 GW/cm ), dielectric layer of the thin film device layer stack 401 (generally in the range of O.lGW/cm and lOGW/cm ), or an interconnect layer of the thin film device layer stack 401 (generally be in the range of 0.01G W/cm and 0. lGW/cm ).
マスク材料（概して、０．０００１ＧＷ／ｃｍ^２～０．００１ＧＷ／ｃｍ^２の範囲内）、薄膜デバイス層スタック４０１の誘電体層（概して、０．１ＧＷ／ｃｍ^２～１０ＧＷ／ｃｍ^２の範囲内）、又は薄膜デバイス層スタック４０１の配線層（概して、０．０１ＧＷ／ｃｍ^２～０．１ＧＷ／ｃｍ^２の範囲内である）のうちの何れかに関連する閾値によって画定される。

WO2018236682
[0004] In particular, FIG. 1 illustrates a metal layout of a conventional semiconductor device 10 that includes a gate pad 12, a source pad 22 and a drain pad 32 on a semiconductor structure 20.
【０００４】
  特に図１は、半導体構造２０上の、ゲート・パッド１２、ソース・パッド２２、及びドレイン・パッド３２を含む、従来の半導体デバイス１０のメタル層レイアウトを示す。

FIG. 1 is a plan view of the semiconductor device (i.e., looking down at the device from above) that illustrates various metal contact structures of the semiconductor device 10 that are formed on the underlying semiconductor structure 20.
図１は、基礎となる半導体構造２０の上に形成された半導体デバイス１０の様々なメタル層コンタクト構造を示す、半導体デバイスの平面図（すなわち、デバイスを上方から見下ろす図）である。

As shown in FIG. 1, in the conventional semiconductor device 10, the gate pad 12 is connected by a gate bus 14 to a plurality of gate fingers 16 that extend in parallel in a first direction (e.g., the y-direction indicated in FIG. 1).
図１に示すように、従来の半導体デバイス１０では、ゲート・パッド１２がゲート・バス１４により、第１の方向（たとえば、図１に示すｙ方向）に並行して伸びる複数のゲート・フィンガー１６に接続する。

The drain pad 32 is connected to a plurality of drain contacts 36 via a drain bus 34.
ドレイン・パッド３２は、ドレイン・バス３４を介して複数のドレイン・コンタクト３６に接続する。

The source pad 22 is connected to a plurality of parallel source contacts 26 via a source bus 24 that is disposed at（＊onも可？）a different metallization layer (here a higher metallization layer that runs above the gate fingers 16 and the drain contacts 36).
ソース・パッド２２は、異なる配線層（ここではゲート・フィンガー１６及びドレイン・コンタクト３６の上方を走る（＊延在）、より上層の配線層）に配置するソース・バス２４を介して、複数の並列ソース・コンタクト２６に接続する。

Vertically-extending (i.e., extending in a z-direction that is perpendicular to the x-direction and the y-direction) source contact plugs 28 electrically connect each source contact 26 to the source bus 24.
縦方向に伸びる（すなわち、ｘ方向とｙ方向とに垂直なｚ方向に伸びる）ソース・コンタクト・プラグ２８は、電気的に各ソース・コンタクト２６をソース・バス２４に接続する。

EP3396742
[0029] With respect to the IC process, nodes may typically be differentiated by the minimum feature size of a transistor, such as its "so-called" transistor channel.
【００４８】
  ＩＣプロセスに関して、ノードは、トランジスタにおける「いわゆる」チャネルなどの、トランジスタの最小機能部寸法によって差別化され得る。

This physical feature, along with other parameters of the IC fabrication, such as gate oxide thickness, may be associated with a resulting rating standard for "turn-on" or "threshold" voltages of field-effect transistors (FET's) fabricated in the given process node.
この物理的特徴部は、他のＩＣ製造パラメータ（ゲート酸化膜厚など）と共に、所与のプロセスノードに製造された電界効果トランジスタ（ＦＥＴ）の、得られる「ターンオン」時定格標準、又は「閾値」電圧と関連付けることができる。

For example, in a node with a minimum feature size of 0.5 microns, it may be common to find FET's with turn-on voltages of 5.0V. However, at a minimum feature size of 90 nm, the FET's may turn-on at 1.2, 1.8, and 2.5V.
例えば、最小特徴寸法が０．５マイクロメートルのノードでは、ＦＥＴのターンオン電圧は５．０Ｖであることが通常であり得る。しかしながら、９０ｎｍの最小特徴寸法では、ＦＥＴは、１．２、１．８、及び２．５Ｖでターンオンし得る。

The IC foundry may supply standard cells of digital blocks, for example, inverters and flip-flops that have been characterized and are rated for use over certain voltage ranges.
ＩＣ製造工場は、ある特定の電圧範囲での使用に特徴付けられ、定格を定められた、例えばインバーターやフリップフロップのようなデジタルブロックの標準的なセルを供給し得る。

Designers chose an IC process node based on several factors including density of digital devices, analog/digital mixed signal devices, leakage current, wiring layers, and availability of specialty devices such as high-voltage FET's.
設計者は、デジタル素子の密度、アナログ／デジタル混合信号素子、リーク電流、配線層、及び高圧ＦＥＴのような特殊素子のアベイラビリティといったいくつかの要因に基づいて、ＩＣプロセスノードを選択する。

Given these parametric aspects of the electrical components, which may draw power from a microbattery,
超小型電池から電力を引き出すことができる電気部品のこうしたパラメータに関する側面を前提として、

it may be important for the microbattery power source to be matched to the requirements of the chosen process node and IC design, especially in terms of available voltage and current.
超小型電池の電源を、特に利用可能な電圧及び電流の点で、選択したプロセスノード及びＩＣ設計の要件に一致させることが重要となり得る。

横方向拡散

EP3672367
[0053] In an embodiment, each amplifier stage 324, 325 is implemented as a power transistor, such as a field effect transistor (FET),
【００４２】
  一実施形態では、各増幅段３２４、３２５が、電界効果トランジスタ（ＦＥＴ：field effect transistor）のようなパワートランジスタとして実現され、

having an input terminal (e.g., a gate or control terminal) and two current carrying terminals (e.g., source and drain terminals).
このパワートランジスタは、入力端子（例えば、ゲートまたは制御端子）及び２つの電流搬送端子（例えば、ソース端子及びドレイン端子）を有する。

Impedance matching circuits (not illustrated) may be coupled to the input (e.g., gate) of the driver amplifier stage 324, between the driver and final amplifier stages 325, and/or to the output (e.g., drain terminal) of the final amplifier stage 325, in various embodiments.
種々の実施形態では、インピーダンス整合回路（図示せず）を、駆動増幅段３２４の入力（ゲート）端子に、駆動増幅段と最終増幅段３２５との間に、及び／または最終増幅段３２５の出力（例えば、ドレイン）端子に結合することができる。

In an embodiment, each transistor of the amplifier stages 324, 325 includes a laterally diffused metal oxide semiconductor FET (LDMOSFET) transistor.
一実施形態では、増幅段３２４、３２５の各トランジスタが横方向拡散金属酸化物半導体ＦＥＴ（ＬＤＭＯＳＦＥＴ：laterally diffused metal oxide semiconductor FET）トランジスタを含む。

However, it should be noted that the transistors are not intended to be limited to any particular semiconductor technology,
しかし、これらのトランジスタはいずれの特定の半導体技術に限定されることも意図しておらず、

and in other embodiments, each transistor may be realized as a gallium nitride (GaN) transistor, another type of MOSFET transistor, a bipolar junction transistor (BJT), or a transistor utilizing another semiconductor technology.
他の実施形態では、各トランジスタは、窒化ガリウム（GaN）トランジスタ、他の種類のＭＯＳＦＥＴトランジスタ、バイポーラ接合トランジスタ（ＢＪＴ：bipolar junction transistor）、または他の半導体技術を利用したトランジスタとして実現することができる。