上部、下部

ヘッダは、上部に位置するガスヘッダと、下部に位置する液ヘッダを有している。

ChatGPT:

ChatGPT

The header includes a gas header located at the top and a liquid header located at the bottom.

あなた:

Does the word "the top" in the translation encompass not just the very top but the "upper half" of the header?

ChatGPT:

ChatGPT

Yes, "the top" in English can encompass the upper portion of an object, not strictly the very topmost point, depending on context. If you want to explicitly convey that the gas header is positioned in the "upper half" rather than strictly at the topmost point, a slight adjustment to the translation might help:

"The header includes a gas header positioned in the upper part and a liquid header positioned in the lower part."

This phrasing avoids the potential strict interpretation of "the top" and "the bottom" as the very extremes.

あなた:

In "The header includes a gas header positioned in the upper part and a liquid header positioned in the lower part", what if the word "positioned" is replaced with "located"?

ChatGPT:

ChatGPT

Replacing "positioned" with "located" in this sentence results in:

"The header includes a gas header located in the upper part and a liquid header located in the lower part."

This change maintains the same meaning and is equally clear. The choice between "positioned" and "located" often comes down to stylistic preference, with "located" being slightly more neutral and "positioned" possibly implying intentional placement. Either works well in this context.

加工送り

US10759015(ABB SCHWEIZ AG [CH])
[0024] During the machining process, the machining tool relatively moves against the work piece to apply machining feeds therebetween.
【００２０】
  機械加工プロセスの間、機械加工工具は、加工物に対して相対的に動き、その間で機械加工送りを適用する。

Namely the machining tool moves in translation and/or rotation while the work piece keeps still,
すなわち、加工物が静止している間に加工工具が併進及び／又は回転して動き、

or the work piece moves in translation and/or rotation while the machining tool keeps still,
あるいは、加工工具が静止している間に加工物が並進及び／又は回転して動き、

or both the machining tool and the work piece move in translation and/or rotation simultaneously. 
あるいは、その両方で、機械加工工具及び加工物は、同時に併進及び／又は回転して動く。

なる、するように形成する

US2019062910(GES ASS L L C [US])
[0044] According to one embodiment of the present invention, electrical adapter 240 is formed so as to make a press-fit, also known in the art has an interference fit, coupling to（＊圧入結合となるように）electrical contact 238 . For some embodiments of the present invention, serpentine heating element 222 may be made of pyrolytic graphite; as an option for those embodiments, electrical adapter 240 may be made of pyrolytic graphite. Optionally, electrical adapter 240 may be made of materials other than pyrolytic graphite that are also suitable for electrical connections.

EP3072598(BOEING CO [US])
The shaping section further has a shaping surface formed so as to connect the area between the first contact part and the second contact part, and a sealant provision hole for providing the sealant to a space surrounded by the shaping surface and the object. The guide part is provided with a guide surface formed so as to make linear contact with a corner part of the step-shaped upper section. As a result of this configuration, positional displacement of the shaping section can be prevented and variations in dimensions and shape can be suppressed.

EP1088589(PFIZER PROD INC [US])
[0017] Another advantage of the preferred embodiment is its compatibility with standard 96-well pipetting equipment and the ability to easily automate the processing of donating and receiving samples of the dialysis assay using readily available robotic systems. Such an embodiment allows the investigator to analyze a much larger number of samples, time points, or replicates in the same experiment than previously possible using the prior art. Furthermore, by varying the dimensions of the wells and their location relative to one another, arrays of various sizes and dimensions can be formed so as to make the wells compatible with other and future laboratory supplies and equipment.

US3108613(GEN ELECTRIC)
The wall portion 15 is formed substantially concave relative to member 19 at the necked-down portion 18 of housing portion 3. When the pin 20 and member 19 are rotated 90' clockwise from the position shown in FIGURE 2, this causes the member 19 (which is shown in its "up" position in FIGURE 3) to assume a "down" position. When member 19 moves to its down position, it deforms the elastomeric wall 15 to force it tightly against the inside surface of necked-down section 18, the actuatin,g member 19 being formed so as to make the olastomoric wall portion 15 have the necessary shape to mate with necked-dovvm section 13.

US5270485(SARCOS GROUP [US])
FIGS. 2A and 2B respectively show a side, elevational view and an end view of a plurality of cylindrical substrates 24 on two of which are formed helical conductors 28, some of which are connected to circuit components 32, and on one of which are formed ring or circumferential conductors 36. In the configuration shown in FIG. 2A, the helical conductors 28 on the two cylinders 24 are positioned so as to make contact between cylinders and allow for the transfer of electrical signals from components 32 of one cylinder to components 32 on the other cylinder. This is also illustrated in FIG. 2B, by the dots between the cylinders. Similarly, the ring conductors 36 are formed so as to make contact with at least some of the helical conductors 28 on the adjacent cylinder.

US8560083(STRYKER CORP [US])
6. The electrode array of claim 1 wherein:

said frame is further formed so that the first said bridge is further formed to have tabs that extend outwardly away from the longitudinal axis of the said first bridge and away from the second said bridge; and

said electrodes are disposed on the tabs of the first said bridge that extend away from the second said bridge.

US7851865(IBM [US])
[0023] Another similarly configured conductor (i.e., a second conductor) that traverses and merges the opposite end of each of the semiconductor fins can also be formed. The first and second conductors may be formed so that the FET structure is symmetric with series resistance on either side of the gate electrode being approximately equal. However, transistor designers may also find it necessary to selectively vary the series resistance in the source (i.e., on one side of the gate electrode) as compared to that in the drain (i.e., on the opposite side of the gate electrode). Thus, it is anticipated that the method embodiments may not result in a symmetric FET structure.